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Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-3600C19-8GSXW 8GB

Samsung M471B5173EB0-YK0 4GB vs G Skill Intl F4-3600C19-8GSXW 8GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXW 8GB

G Skill Intl F4-3600C19-8GSXW 8GB

差异 规格 评论

差异

Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误
G Skill Intl F4-3600C19-8GSXW 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 44
    左右 -144% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-3600C19-8GSXW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 18
  • 读取速度，GB/s
    13.0 left arrow 20.5
  • 写入速度，GB/s
    8.2 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2069 left arrow 3575

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3600C19-8GSXW 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston K821PJ-MIH 16GB
Kingston K821PJ-MIH 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK16GX4M4A2133C15 4GB
Corsair CMK16GX4M4A2133C15 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CMK16GX4M2A2666C16 8GB
Corsair CMK16GX4M2A2666C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
G Skill Intl F4-3600C17-16GTZR 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK64GX4M2Z4000C18 32GB
Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
内存RAM