Samsung M471B5173EB0-YK0 4GB vs Kingmax Semiconductor GLLF62F-D8---------- 4GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

差异规格评论

差异

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 62

左右 29% 更低的延时

Kingmax Semiconductor GLLF62F-D8---------- 4GB

需要考虑的原因
Kingmax Semiconductor GLLF62F-D8---------- 4GB

报告一个错误

更快的读取速度，GB/s

16.2 13

测试中的平均数值
更快的写入速度，GB/s

9.7 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173EB0-YK0 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 62
读取速度，GB/s

13.0 16.2
写入速度，GB/s

8.2 9.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2069 1772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology AFLD44EK2P 4GB

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Corsair CMT64GX4M4K3600C16 16GB

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Corsair CML16GX3M2A1600C10 8GB

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Samsung M391A1G43DB0-CPB 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Avant Technology F6451U64F9333G 4GB

Corsair CMK64GX4M2A2400C16 32GB

Corsair CMK64GX4M2A2400C16 32GB