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Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BL4G24C16U4B.8FB 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Crucial Technology BL4G24C16U4B.8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Crucial Technology BL4G24C16U4B.8FB 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
45
左右 -55% 更低的延时
更快的读取速度,GB/s
16.5
12.3
测试中的平均数值
更快的写入速度,GB/s
13.1
8.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
29
读取速度,GB/s
12.3
16.5
写入速度,GB/s
8.0
13.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1992
2983
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology BL4G24C16U4B.8FB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HYMP164U64CP6-Y5 512MB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA82GR7AFR8N-VK 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Samsung M378B5173BH0-CH9 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
报告一个错误
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