Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS8G4D30CESTK.8FD 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology BLS8G4D30CESTK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30CESTK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 45

左右 -36% 更低的延时
更快的读取速度，GB/s

16 12.3

测试中的平均数值
更快的写入速度，GB/s

13.3 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 33
读取速度，GB/s

12.3 16.0
写入速度，GB/s

8.0 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1992 3238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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AMD R9S48G3206U2S 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMK128GX4M4D3600C18 32GB

Corsair CMK128GX4M4D3600C18 32GB