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Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160BJ.T8 4GB

Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT51264BF160BJ.T8 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Crucial Technology CT51264BF160BJ.T8 4GB

Crucial Technology CT51264BF160BJ.T8 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 7.8
    测试中的平均数值
Crucial Technology CT51264BF160BJ.T8 4GB 需要考虑的原因
Crucial Technology CT51264BF160BJ.T8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 45
    左右 -18% 更低的延时

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160BJ.T8 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 38
  • 读取速度，GB/s
    12.3 left arrow 12.3
  • 写入速度，GB/s
    8.0 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 1965

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Crucial Technology CT51264BF160BJ.T8 4GB RAM的比较

Crucial Technology CT51264BF160BJ.C8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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