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Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
比较
Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3200C14-16GTZSK 16GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
G Skill Intl F4-3200C14-16GTZSK 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C14-16GTZSK 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
45
左右 -73% 更低的延时
更快的读取速度,GB/s
19
12.3
测试中的平均数值
更快的写入速度,GB/s
17.1
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
26
读取速度,GB/s
12.3
19.0
写入速度,GB/s
8.0
17.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
4022
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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Kingston 99U5428-101.A00LF 8GB
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Smart Modular SMS4TDC3C0K0446SCG 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMR32GX4M4C3466C16 8GB
报告一个错误
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Bug description
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