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Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 45
    左右 -80% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 25
  • 读取速度，GB/s
    12.3 left arrow 14.8
  • 写入速度，GB/s
    8.0 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 2542

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Wilk Elektronik S.A. W-HK26S16G 16GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Micron Technology 18HTF12872AY-800F1 1GB
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Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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A-DATA Technology DDR3 1333G 2GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMD16GX4M2A2400C14 8GB
Corsair CMD16GX4M2A2400C14 8GB
内存RAM
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Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston 9905624-022.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
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Kingston ACR26D4U9S8ME-8X 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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OCMEMORY OCM2933CL16-16GBH 16GB
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