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Samsung M471B5273CH0-CH9 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Samsung M471B5273CH0-CH9 4GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 48
    左右 -66% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 29
  • 读取速度，GB/s
    8.9 left arrow 22.8
  • 写入速度，GB/s
    5.9 left arrow 16.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3792

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905625-076.A00G 8GB
Kingston 9905625-076.A00G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMH32GX4M2Z3600C18 16GB
Corsair CMH32GX4M2Z3600C18 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KHX2666C16D4/32GX 32GB
Kingston KHX2666C16D4/32GX 32GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMK16GX4M2C3000C15 8GB
Corsair CMK16GX4M2C3000C15 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
内存RAM