Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BLS16G4D26BFSC.16FD 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BLS16G4D26BFSC.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSC.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 48

左右 -41% 更低的延时
更快的读取速度，GB/s

16.7 8.9

测试中的平均数值
更快的写入速度，GB/s

14.8 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 34
读取速度，GB/s

8.9 16.7
写入速度，GB/s

5.9 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3284

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology BL32G32C16S4B.16FB 32GB

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Kingston 9965662-016.A00G 16GB

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G Skill Intl F4-3000C16-16GISB 16GB

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G Skill Intl F4-3000C16-16GISB 16GB

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Corsair CMK32GX4M4D3600C18 8GB

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Kingston 9905403-447.A00LF 4GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Smart Modular SF464128CK8I6GKSEG 4GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB