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Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB

Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BLS16G4D30AESB.M16FE 16GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Crucial Technology BLS16G4D30AESB.M16FE 16GB 需要考虑的原因
Crucial Technology BLS16G4D30AESB.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 48
    左右 -85% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 26
  • 读取速度，GB/s
    8.9 left arrow 18.5
  • 写入速度，GB/s
    5.9 left arrow 14.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3596

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
AMD R744G2133U1S 4GB
AMD R744G2133U1S 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
SK Hynix HMA84GL7AMR4N-UH 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Apacer Technology 78.CAGMR.ARC0B 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston 9965604-001.D00G 16GB
Kingston 9965604-001.D00G 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-4000C19-8GTZKW 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMA84GR7MFR4N-TF 32GB
SK Hynix HMA84GR7MFR4N-TF 32GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Super Talent F24EA8GS 8GB
Super Talent F24EA8GS 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston 9905702-008.A00G 8GB
Kingston 9905702-008.A00G 8GB
内存RAM