Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-3000C15-4GTZB 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

G Skill Intl F4-3000C15-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GTZB 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 48

左右 -153% 更低的延时
更快的读取速度，GB/s

19.1 8.9

测试中的平均数值
更快的写入速度，GB/s

14.8 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 19
读取速度，GB/s

8.9 19.1
写入速度，GB/s

5.9 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Kingston 9905316-106.A02LF 1GB

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston K1N7HK-ELC 2GB

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Corsair CMSX32GX4M2A2400C16 16GB

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G Skill Intl F4-3000C16-8GTRG 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston ACR26D4S9S1ME-4 4GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Samsung M471A1G43EB1-CRC 8GB

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Samsung M471A1K1KBB0-CPB 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Apacer Technology 78.C1GS7.AUW0B 8GB