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Samsung M471B5273CH0-CH9 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB

Samsung M471B5273CH0-CH9 4GB vs Mushkin MR[ABC]4U266GHHF8G 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Mushkin MR[ABC]4U266GHHF8G 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Mushkin MR[ABC]4U266GHHF8G 8GB 需要考虑的原因
Mushkin MR[ABC]4U266GHHF8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 48
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Mushkin MR[ABC]4U266GHHF8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 32
  • 读取速度，GB/s
    8.9 left arrow 17.0
  • 写入速度，GB/s
    5.9 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 2958

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Mushkin MR[ABC]4U266GHHF8G 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB
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Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
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SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
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Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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G Skill Intl F4-3600C14-16GVK 16GB
内存RAM
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Micron Technology 4ATF1G64AZ-3G2B1 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
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内存RAM
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内存RAM
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Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
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内存RAM
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内存RAM
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SpecTek Incorporated PSD34G13332 4GB
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Kingston ACR32D4S2S8ME-16 16GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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G Skill Intl F4-2933C14-16GFX 16GB
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