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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
比较
Samsung M471B5273CH0-CH9 4GB vs Samsung M471B5273CH0-CH9 4GB
总分
Samsung M471B5273CH0-CH9 4GB
总分
Samsung M471B5273CH0-CH9 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
规格
完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
48
48
读取速度,GB/s
8.9
8.9
写入速度,GB/s
5.9
5.9
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1420
1420
Samsung M471B5273CH0-CH9 4GB RAM的比较
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Samsung M471B5273CH0-CH9 4GB RAM的比较
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMK32GX4M2Z3600C18 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
SK Hynix HMT451S6BFR8A-PB 4GB
Asgard VMA45UG-MIC1U22T2 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471B5173EB0-YK0 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2133C15-8GRR2 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMW32GX4M4Z2933C16 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMR32GX4M4A2666C16 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905713-019.A00G 4GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology AFLD44EK2P 4GB
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