RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2133C15-8GRR2 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-2133C15-8GRR2 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-2133C15-8GRR2 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GRR2 8GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2133C15-8GRR2 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    17.8 left arrow 11.0
  • 写入速度，GB/s
    12.5 left arrow 9.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2388

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2133C15-8GRR2 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-16GIS 16GB
G Skill Intl F4-3200C16-16GIS 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK32GX4M4B4000C19 8GB
Corsair CMK32GX4M4B4000C19 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMU64GX4M4C3200C16 16GB
Corsair CMU64GX4M4C3200C16 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM