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Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Samsung M471B5273DH0-CH9 4GB vs Crucial Technology BL8G30C15U4WL.M8FE1 8GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
Crucial Technology BL8G30C15U4WL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 29
  • 读取速度，GB/s
    9.3 left arrow 16.8
  • 写入速度，GB/s
    5.9 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 3143

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CM4X8GE2666C16K8 8GB
Corsair CM4X8GE2666C16K8 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Kingston 99U5471-033.A00LF 4GB
Kingston 99U5471-033.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM