Samsung M471B5273DH0-CH9 4GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的读取速度，GB/s

18 9.3

测试中的平均数值
更快的写入速度，GB/s

14.3 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

9.3 18.0
写入速度，GB/s

5.9 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1413 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Asgard VMA42UG-MEC1U2AW1 8GB

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

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Corsair CM4X4GD3000C15K4 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

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G Skill Intl F4-3200C16-8GTZN 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB