Samsung M471B5273DH0-CH9 4GB vs G Skill Intl F4-3200C16-8GRKB 8GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

G Skill Intl F4-3200C16-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 47

左右 -147% 更低的延时
更快的读取速度，GB/s

19.9 9.3

测试中的平均数值
更快的写入速度，GB/s

15.0 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3200C16-8GRKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 19
读取速度，GB/s

9.3 19.9
写入速度，GB/s

5.9 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C14-16GRK 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Corsair CMD16GX3M2A1866C9 8GB

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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

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Kingston KF552C40-16 16GB

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Corsair CMK16GX4M4B3733C17 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston HP37D4U1S8ME-16X 16GB