Samsung M471B5273DH0-CH9 4GB vs Kingston XG9XKG-MIE 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 55

左右 15% 更低的延时

Kingston XG9XKG-MIE 16GB

需要考虑的原因
Kingston XG9XKG-MIE 16GB

报告一个错误

更快的读取速度，GB/s

17.2 9.3

测试中的平均数值
更快的写入速度，GB/s

14.3 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Kingston XG9XKG-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 55
读取速度，GB/s

9.3 17.2
写入速度，GB/s

5.9 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1413 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Essencore Limited KD48GS88J-26N1900 8GB

Essencore Limited KD48GS88J-26N1900 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB