Samsung M471B5273DH0-CH9 4GB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G3A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 47

左右 -21% 更低的延时
更快的读取速度，GB/s

11.5 9.3

测试中的平均数值
更快的写入速度，GB/s

9.1 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 39
读取速度，GB/s

9.3 11.5
写入速度，GB/s

5.9 9.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1413 1881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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Kingston KHX2133C14D4/8G 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMK16GX4M4A2400C14 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

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Corsair CMX4GX3M1A1333C9 4GB

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3200C14-8GVK 8GB

G Skill Intl F4-3200C14-8GVK 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Kingston 9905663-016.A00G 16GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-2400C17-4GVR 4GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB