Samsung M471B5273DH0-CH9 4GB vs Transcend Information AQD-SD4U16GN21-SE 16GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Transcend Information AQD-SD4U16GN21-SE 16GB

需要考虑的原因
Transcend Information AQD-SD4U16GN21-SE 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 -74% 更低的延时
更快的读取速度，GB/s

13.5 9.3

测试中的平均数值
更快的写入速度，GB/s

11.9 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Transcend Information AQD-SD4U16GN21-SE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 27
读取速度，GB/s

9.3 13.5
写入速度，GB/s

5.9 11.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1413 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL19-19-19 D4-2666

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Teikon TMA851U6CJR6N-VKSC 4GB

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Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

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