Samsung M471B5273EB0-CK0 4GB vs Corsair CMD32GX4M4C3466C16W 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Corsair CMD32GX4M4C3466C16W 8GB

需要考虑的原因
Corsair CMD32GX4M4C3466C16W 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 40

左右 -100% 更低的延时
更快的读取速度，GB/s

20.3 12.3

测试中的平均数值
更快的写入速度，GB/s

16.3 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Corsair CMD32GX4M4C3466C16W 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 20
读取速度，GB/s

12.3 20.3
写入速度，GB/s

8.9 16.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 3708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905403-444.A00LF 4GB

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Corsair CMK128GX4M8B3000C16 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology CT8G4DFD8213.C16FBD2 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Samsung M378A1G43EB1-CRC 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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