Samsung M471B5273EB0-CK0 4GB vs Kingston 9905599-020.A00G 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Kingston 9905599-020.A00G 8GB

Kingston 9905599-020.A00G 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Kingston 9905599-020.A00G 8GB

需要考虑的原因
Kingston 9905599-020.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

14.5 12.3

测试中的平均数值
更快的写入速度，GB/s

9.5 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Kingston 9905599-020.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

12.3 14.5
写入速度，GB/s

8.9 9.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CVF 4GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston 9905599-020.A00G 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

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G Skill Intl F4-3600C18-8GTRS 8GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Crucial Technology BLE8G4D30AEEA.K16FE 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB