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Samsung M471B5273EB0-CK0 4GB
Kingston KHX3200C20S4/16GX 16GB

Samsung M471B5273EB0-CK0 4GB vs Kingston KHX3200C20S4/16GX 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Kingston KHX3200C20S4/16GX 16GB 需要考虑的原因
Kingston KHX3200C20S4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 40
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Kingston KHX3200C20S4/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 35
  • 读取速度，GB/s
    12.3 left arrow 17.2
  • 写入速度，GB/s
    8.9 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3415

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Kingston KHX3200C20S4/16GX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965600-027.A00G 16GB
Kingston 9965600-027.A00G 16GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
内存RAM
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Corsair CMR16GX4M2F4000C19 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK64GX4M2Z4000C18 32GB
Corsair CMK64GX4M2Z4000C18 32GB
内存RAM