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Samsung M471B5673FH0-CF8 2GB
Corsair CMK8GX4M1E3200C16 8GB

Samsung M471B5673FH0-CF8 2GB vs Corsair CMK8GX4M1E3200C16 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Corsair CMK8GX4M1E3200C16 8GB 需要考虑的原因
Corsair CMK8GX4M1E3200C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Corsair CMK8GX4M1E3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 30
  • 读取速度，GB/s
    10.6 left arrow 18.0
  • 写入速度，GB/s
    6.8 left arrow 13.8
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3334

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Corsair CMK8GX4M1E3200C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMR16GX4M2C3000C16 8GB
Corsair CMR16GX4M2C3000C16 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston HP24D4R7D4MAM-32 32GB
Kingston HP24D4R7D4MAM-32 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM