RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Micron Technology 4ATF51264AZ-2G3E1 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
需要考虑的原因
Micron Technology 4ATF51264AZ-2G3E1 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
44
左右 -63% 更低的延时
更快的读取速度,GB/s
15
12.3
测试中的平均数值
更快的写入速度,GB/s
10.9
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
27
读取速度,GB/s
12.3
15.0
写入速度,GB/s
7.8
10.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1977
2288
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Asgard VMA45UG-MEC1U2AW1 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMA82GU6DJR8N-XN 16GB
Samsung M471B5273DH0-CH9 4GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Kingston 9905584-016.A00LF 4GB
Kingston KHX3600C18D4/16GX 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-2400C17-8GISM 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9965669-008.A03G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Micron Technology 4ATF51264HZ-2G6E1 4GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
报告一个错误
×
Bug description
Source link