Samsung M471B5673FH0-CF8 2GB vs Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 30

左右 -58% 更低的延时
更快的读取速度，GB/s

20 10.6

测试中的平均数值
更快的写入速度，GB/s

16.2 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 19
读取速度，GB/s

10.6 20.0
写入速度，GB/s

6.8 16.2
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1479 3542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD824A.M16FR 16GB

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Mushkin MR[A/B]4U320GJJM8G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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Samsung 1600 CL10 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N