Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-2666C15-4GVR 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

G Skill Intl F4-2666C15-4GVR 4GB

G Skill Intl F4-2666C15-4GVR 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时

G Skill Intl F4-2666C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVR 4GB

报告一个错误

更快的读取速度，GB/s

16.9 10.6

测试中的平均数值
更快的写入速度，GB/s

12.1 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-2666C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 31
读取速度，GB/s

10.6 16.9
写入速度，GB/s

6.8 12.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2577

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Apacer Technology AQD-SD4U4GN24-SG 4GB

Apacer Technology AQD-SD4U4GN24-SG 4GB

Samsung M3 78T2953EZ3-CE7 1GB

Samsung M3 78T2953EZ3-CE7 1GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB