Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-3300C16-16GTZ 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 9% 更低的延时

G Skill Intl F4-3300C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZ 16GB

报告一个错误

更快的写入速度，GB/s

8.4 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3300C16-16GTZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 33
读取速度，GB/s

10.6 10.6
写入速度，GB/s

6.8 8.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD824A.M16FA 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston HX424C15PB/4 4GB

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Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston ACR26D4S9D8MD-16 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB