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Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4133C19-4GTZ 4GB

Samsung M471B5673FH0-CF8 2GB vs G Skill Intl F4-4133C19-4GTZ 4GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
G Skill Intl F4-4133C19-4GTZ 4GB

G Skill Intl F4-4133C19-4GTZ 4GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
G Skill Intl F4-4133C19-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-4133C19-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 30
    左右 -58% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 19
  • 读取速度，GB/s
    10.6 left arrow 19.5
  • 写入速度，GB/s
    6.8 left arrow 14.9
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3355

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

G Skill Intl F4-4133C19-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Transcend Information JM3200HLE-32GK 16GB
Transcend Information JM3200HLE-32GK 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMK8GX4M2B3600C18 4GB
Corsair CMK8GX4M2B3600C18 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM