Samsung M471B5673FH0-CF8 2GB vs Heoriady M471A1K43CB1-CTD 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 41% 更低的延时
更快的读取速度，GB/s

10.6 10.5

测试中的平均数值
更快的写入速度，GB/s

6.8 5.5

测试中的平均数值

Heoriady M471A1K43CB1-CTD 8GB

需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Heoriady M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 51
读取速度，GB/s

10.6 10.5
写入速度，GB/s

6.8 5.5
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 1941

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AO2P32NCSV1-BEVS 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

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Kingston MSI24D4S7D8MB-16 16GB

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Kingston HP669238-071-HYC 4GB

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G Skill Intl F4-3600C17-8GTZ 8GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

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Kingston 9905403-061.A00LF 2GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston KHX3466C17D4/16GX 16GB

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Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB