Samsung M471B5673FH0-CF8 2GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 32% 更低的延时

Lexar Co Limited LD4AS016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

16.6 10.6

测试中的平均数值
更快的写入速度，GB/s

14.2 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 44
读取速度，GB/s

10.6 16.6
写入速度，GB/s

6.8 14.2
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1479 3146

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.M8FE 8GB

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Panram International Corporation PUD42400C154GNJW 4GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

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PUSKILL DDR3 1600 8G 8GB

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SK Hynix HMA451R7AFR8N-TF 4GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

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Apacer Technology 78.01GA0.9K5 1GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

Kingston KHX1600C9S3L/4G 4GB

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Apacer Technology 78.BAGM6.40C0B 4GB

Apacer Technology 78.BAGM6.40C0B 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB