Samsung M471B5673FH0-CF8 2GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 64

左右 53% 更低的延时

Micron Technology 18ADF2G72AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G6E1 16GB

报告一个错误

更快的读取速度，GB/s

18 10.6

测试中的平均数值
更快的写入速度，GB/s

8.5 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 64
读取速度，GB/s

10.6 18.0
写入速度，GB/s

6.8 8.5
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 2197

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMH16GX4M2D3600C18 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT16G4SFS8266.C8FE 16GB

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PNY Electronics PNY 2GB

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Samsung M471B5773DH0-CH9 2GB

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Corsair CMK16GX4M2A2800C16 8GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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AMD AE34G1601U1 4GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

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Corsair CML8GX3M2A1600C9 4GB

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Kingston 9905624-045.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

A-DATA Technology 11137401 8GB

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