Samsung M471B5673FH0-CF8 2GB vs Samsung M471B5273CH0-YK0 4GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 21% 更低的延时

Samsung M471B5273CH0-YK0 4GB

需要考虑的原因
Samsung M471B5273CH0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

12.6 10.6

测试中的平均数值
更快的写入速度，GB/s

8.8 6.8

测试中的平均数值
更高的内存带宽，mbps

12800 8500

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5273CH0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 38
读取速度，GB/s

10.6 12.6
写入速度，GB/s

6.8 8.8
内存带宽，mbps

8500 12800

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1479 2174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4C3200C16 4GB

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Transcend Information TS2GSH64V1B 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Kingston 99U5711-001.A00G 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Samsung M471A1K43DB1-CTD 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMR32GX4M2F3600C18 16GB

Corsair CMR32GX4M2F3600C18 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

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Kingston 9965525-018.A00LF 4GB

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Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB