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Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB

Samsung M471B5673FH0-CF8 2GB vs Team Group Inc. TEAMGROUP-ED4-2400 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 85
    左右 65% 更低的延时
Team Group Inc. TEAMGROUP-ED4-2400 16GB 需要考虑的原因
Team Group Inc. TEAMGROUP-ED4-2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 85
  • 读取速度，GB/s
    10.6 left arrow 13.2
  • 写入速度，GB/s
    6.8 left arrow 9.2
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 1838

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMR32GX4M4C3000C16 8GB
Corsair CMR32GX4M4C3000C16 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD64GX4M4C3000C15 16GB
Corsair CMD64GX4M4C3000C15 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C19-16GTRS 16GB
G Skill Intl F4-3600C19-16GTRS 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Corsair CM3B4G2C1600L9 4GB
Corsair CM3B4G2C1600L9 4GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM