Samsung M471B5674QH0-YK0 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更快的读取速度，GB/s

17 7.2

测试中的平均数值
更快的写入速度，GB/s

13.5 3.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

7.2 17.0
写入速度，GB/s

3.0 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

915 2703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston 9905633-017.A00G 8GB

Kingston 9905633-017.A00G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Super Talent STT-WB160CL0901 2GB

Super Talent STT-WB160CL0901 2GB

G Skill Intl F4-3600C14-16GTRS 16GB

G Skill Intl F4-3600C14-16GTRS 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston CBD24D4S7S8MB-8 8GB

Kingston CBD24D4S7S8MB-8 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

G Skill Intl F4-3000C15-8GRRB 8GB

G Skill Intl F4-3000C15-8GRRB 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB