Samsung M471B5674QH0-YK0 2GB vs Kingston 99U5702-094.A00G 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

总分

Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB

差异规格评论

差异

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

Kingston 99U5702-094.A00G 8GB

需要考虑的原因
Kingston 99U5702-094.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时
更快的读取速度，GB/s

14.8 7.2

测试中的平均数值
更快的写入速度，GB/s

12.5 3.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5674QH0-YK0 2GB

Kingston 99U5702-094.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 32
读取速度，GB/s

7.2 14.8
写入速度，GB/s

3.0 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

915 2997

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M4A2666C16 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

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Kingston 9905702-204.A00G 8GB

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Samsung M471B5674QH0-YK0 2GB

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Kingston 9905701-029.A00G 16GB

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Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB