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Samsung M471B5773DH0-CH9 2GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Samsung M471B5773DH0-CH9 2GB vs Wilk Elektronik S.A. GY2666D464L16/8G 8GB

总分
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分
star star star star star
Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CH9 2GB 需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
Wilk Elektronik S.A. GY2666D464L16/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 43
    左右 -87% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 23
  • 读取速度，GB/s
    11.0 left arrow 17.8
  • 写入速度，GB/s
    7.2 left arrow 14.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1393 left arrow 3086

Samsung M471B5773DH0-CH9 2GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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