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Samsung M471B5773DH0-CK0 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Samsung M471B5773DH0-CK0 2GB vs Crucial Technology BLE8G4D26AFEA.16FBD 8GB

总分
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

总分
star star star star star
Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

差异 规格 评论

差异

Samsung M471B5773DH0-CK0 2GB 需要考虑的原因
Samsung M471B5773DH0-CK0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
Crucial Technology BLE8G4D26AFEA.16FBD 8GB 需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5773DH0-CK0 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    12.2 left arrow 16.6
  • 写入速度，GB/s
    7.8 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1763 left arrow 3141

Samsung M471B5773DH0-CK0 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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