Samsung M471B5773EB0-CK0 2GB vs Kingston KVR800D2S6/4G 4GB

总分

Samsung M471B5773EB0-CK0 2GB

Samsung M471B5773EB0-CK0 2GB

总分

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

差异规格评论

差异

Samsung M471B5773EB0-CK0 2GB

需要考虑的原因
Samsung M471B5773EB0-CK0 2GB

报告一个错误

更快的读取速度，GB/s

5.4 4

测试中的平均数值
更快的写入速度，GB/s

3.6 1,923.1

测试中的平均数值
更高的内存带宽，mbps

12800 6400

左右 2% 更高的带宽

Kingston KVR800D2S6/4G 4GB

需要考虑的原因
Kingston KVR800D2S6/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

50 67

左右 -34% 更低的延时

规格

完整的技术规格清单

Samsung M471B5773EB0-CK0 2GB

Kingston KVR800D2S6/4G 4GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

67 50
读取速度，GB/s

5.4 4,433.3
写入速度，GB/s

3.6 1,923.1
内存带宽，mbps

12800 6400

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

9-9-9-24 / 1600 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

644 761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD8213.C16FH1 16GB

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Kingston 9905403-174.A00LF 2GB

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SK Hynix HMA451R7AFR8N-UH 4GB

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Crucial Technology CT25664BA1339.M8FK 2GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingston X5H5PW-MIE 8GB

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Kingston 99U5700-027.A00G 8GB

Kingston 99U5700-027.A00G 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

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Chun Well Technology Holding Limited ND4U0840180BRPDE 8