RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs G Skill Intl F4-3600C17-16GTZ 16GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
G Skill Intl F4-3600C17-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
28
左右 21% 更低的延时
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C17-16GTZ 16GB
报告一个错误
更快的读取速度,GB/s
18
17.7
测试中的平均数值
更快的写入速度,GB/s
16.5
12.7
测试中的平均数值
规格
完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
22
28
读取速度,GB/s
17.7
18.0
写入速度,GB/s
12.7
16.5
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3075
3741
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
G Skill Intl F4-3600C17-16GTZ 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-2400C15-16GVR 16GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMT16GX4M2K4000C19 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
Kingston 99U5458-008.A00LF 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Kingston 9905471-071.A00LF 8GB
Kingston HP24D4S7S8MBP-8 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung V-GeN D4S4GL30A16TS5 4GB
A-DATA Technology AD5U480016G-B 16GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Kingston KHX318C10FR/8G 8GB
DSL Memory D4SS12081SH21A-A 4GB
A-DATA Technology ADOVE1A0834E 1GB
Chun Well Technology Holding Limited D4U0836144B 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
报告一个错误
×
Bug description
Source link