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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs G Skill Intl F4-4600C19-8GTZKKC 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
G Skill Intl F4-4600C19-8GTZKKC 8GB
差异
规格
评论
差异
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
G Skill Intl F4-4600C19-8GTZKKC 8GB
报告一个错误
低于PassMark测试中的延时,ns
17
22
左右 -29% 更低的延时
更快的读取速度,GB/s
21.2
17.7
测试中的平均数值
更快的写入速度,GB/s
17.2
12.7
测试中的平均数值
规格
完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
22
17
读取速度,GB/s
17.7
21.2
写入速度,GB/s
12.7
17.2
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3075
3714
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
G Skill Intl F4-4600C19-8GTZKKC 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905744-023.A00G 16GB
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Avant Technology J644GU44J2320NQ 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK8GX4M2B4266C19 4GB
报告一个错误
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