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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2933C14-16GTZRX 16GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-2933C14-16GTZRX 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.2
    测试中的平均数值
G Skill Intl F4-2933C14-16GTZRX 16GB 需要考虑的原因
G Skill Intl F4-2933C14-16GTZRX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更快的写入速度，GB/s
    12.6 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2933C14-16GTZRX 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    2,936.9 left arrow 17.2
  • 写入速度，GB/s
    1,884.0 left arrow 12.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3040

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-2933C14-16GTZRX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX4266C19D4/8GX 8GB
Kingston KHX4266C19D4/8GX 8GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
内存RAM
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Essencore Limited KD4AGU88C-26N190A 16GB
Essencore Limited KD4AGU88C-26N190A 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
内存RAM