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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3333C16-16GTZB 16GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-3333C16-16GTZB 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
G Skill Intl F4-3333C16-16GTZB 16GB 需要考虑的原因
G Skill Intl F4-3333C16-16GTZB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 77
    左右 -305% 更低的延时
  • 更快的读取速度，GB/s
    20.8 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 19
  • 读取速度，GB/s
    2,936.9 left arrow 20.8
  • 写入速度，GB/s
    1,884.0 left arrow 17.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3821

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-3333C16-16GTZB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF51264AZ-2G1A1 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM