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SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB

SK Hynix DDR2 800 2G 2GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
G Skill Intl F4-4600C19-8GTZSWC 8GB 需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    16 left arrow 77
    左右 -381% 更低的延时
  • 更快的读取速度，GB/s
    22.3 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    21.2 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 16
  • 读取速度，GB/s
    2,936.9 left arrow 22.3
  • 写入速度，GB/s
    1,884.0 left arrow 21.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3952

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-2933C14-16GTZRX 16GB
G Skill Intl F4-2933C14-16GTZRX 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston 9905624-004.A00G 4GB
Kingston 9905624-004.A00G 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KHX2400C15D4/16GX 16GB
Kingston KHX2400C15D4/16GX 16GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Maxsun MSD48G30Q3 8GB
Maxsun MSD48G30Q3 8GB
内存RAM