SK Hynix DDR2 800 2G 2GB vs Micron Technology 16ATF1G64AZ-2G1A2 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 15.4

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A2 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 77

左右 -114% 更低的延时
更快的写入速度，GB/s

11.5 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 36
读取速度，GB/s

2,936.9 15.4
写入速度，GB/s

1,884.0 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 2792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905663-016.A00G 16GB

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Crucial Technology CT102464BA160B.M16 8GB

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Crucial Technology CT16G4DFD824A.M16FD 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

Samsung M471A2K43CBCBCRC 16GB

Samsung M471A2K43CBCBCRC 16GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-3200C16-8GVK 8GB