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SK Hynix DDR2 800 2G 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB

SK Hynix DDR2 800 2G 2GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.8
    测试中的平均数值
Micron Technology 16ATF2G64HZ-2G6E3 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    2,936.9 left arrow 15.8
  • 写入速度，GB/s
    1,884.0 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2902

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X8GE2400C15K4 8GB
Corsair CM4X8GE2400C15K4 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 9905713-017.A00G 4GB
Kingston 9905713-017.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD128GX4M8A2400C14 16GB
Corsair CMD128GX4M8A2400C14 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2933C14-16GTZRX 16GB
G Skill Intl F4-2933C14-16GTZRX 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-2666C19-16GIS 16GB
G Skill Intl F4-2666C19-16GIS 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM