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SK Hynix DDR2 800 2G 2GB
SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix DDR2 800 2G 2GB vs SK Hynix HMAA1GS6CJR6N-XN 8GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.7
    测试中的平均数值
SK Hynix HMAA1GS6CJR6N-XN 8GB 需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 77
    左右 -43% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 54
  • 读取速度，GB/s
    2,936.9 left arrow 15.7
  • 写入速度，GB/s
    1,884.0 left arrow 11.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2511

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston ACR26D4S9S8MH-8 8GB
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内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
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内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Kingston KHX3333C17D4/4GX 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
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AMD R5S38G1601U2S 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
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内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM