SK Hynix DMT451E6BFR8C-PB 4GB vs Kingston 9905624-051.A00G 8GB

总分

SK Hynix DMT451E6BFR8C-PB 4GB

SK Hynix DMT451E6BFR8C-PB 4GB

总分

Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB

差异规格评论

差异

SK Hynix DMT451E6BFR8C-PB 4GB

需要考虑的原因
SK Hynix DMT451E6BFR8C-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 74

左右 62% 更低的延时
更快的写入速度，GB/s

7.9 6.3

测试中的平均数值

Kingston 9905624-051.A00G 8GB

需要考虑的原因
Kingston 9905624-051.A00G 8GB

报告一个错误

更快的读取速度，GB/s

14.1 13.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix DMT451E6BFR8C-PB 4GB

Kingston 9905624-051.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 74
读取速度，GB/s

13.4 14.1
写入速度，GB/s

7.9 6.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2028 1495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Mushkin 991586 2GB

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G Skill Intl F5-5600J4040C16G 16GB

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Corsair MK16GX4M2B3200C16 8GB

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AMD R7S44G2606U1S 4GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

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Patriot Memory (PDP Systems) PSD48G213381 8GB

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Kingston KVR533D2N4 512MB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB