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SK Hynix HMA451U6AFR8N-TF 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs Hyundai Inc AR32C16S8K2SU416R 8GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
Hyundai Inc AR32C16S8K2SU416R 8GB 需要考虑的原因
Hyundai Inc AR32C16S8K2SU416R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 37
    左右 -85% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 20
  • 读取速度，GB/s
    14.7 left arrow 19.4
  • 写入速度，GB/s
    10.6 left arrow 15.0
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 3395

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hyundai Inc AR32C16S8K2SU416R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Hyundai Inc AR32C16S8K2SU416R 8GB
Hyundai Inc AR32C16S8K2SU416R 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KTP9W1-MID 16GB
Kingston KTP9W1-MID 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMT32GX4M2C3200C16 16GB
Corsair CMT32GX4M2C3200C16 16GB
内存RAM
Micron Technology 16HTF25664AY-800J1 2GB
Micron Technology 16HTF25664AY-800J1 2GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
内存RAM