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SK Hynix HMA451U6AFR8N-TF 4GB
Mushkin MRA4S320GJJM16G 16GB
比较
SK Hynix HMA451U6AFR8N-TF 4GB vs Mushkin MRA4S320GJJM16G 16GB
总分
SK Hynix HMA451U6AFR8N-TF 4GB
总分
Mushkin MRA4S320GJJM16G 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
需要考虑的原因
Mushkin MRA4S320GJJM16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
37
左右 -23% 更低的延时
更快的读取速度,GB/s
16.7
14.7
测试中的平均数值
更快的写入速度,GB/s
14.8
10.6
测试中的平均数值
更高的内存带宽,mbps
21300
17000
左右 1.25 更高的带宽
规格
完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Mushkin MRA4S320GJJM16G 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
37
30
读取速度,GB/s
14.7
16.7
写入速度,GB/s
10.6
14.8
内存带宽,mbps
17000
21300
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2438
3406
SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MRA4S320GJJM16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F3-14900CL8-4GBXM 4GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2400C15-16GFX 16GB
Corsair CMV4GX3M1B1600C11 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
Samsung M471B5173BH0-CK0 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Kingston 9905584-016.A00LF 4GB
Kingston 9905744-027.A00G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KM0VW4-MID 8GB
Samsung M471B1G73AH0-CH9 8GB
Samsung M471B5273BH1-CF8 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston KHX3466C16D4/16GX 16GB
PNY Electronics PNY 2GB
Corsair CMD32GX4M2B3466C16 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
报告一个错误
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Bug description
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